Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet

Ryota Ohtani, Yoshifumi Ikoma, Teruaki Motooka

    Research output: Contribution to journalConference articlepeer-review

    4 Citations (Scopus)

    Abstract

    We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH3SiH3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.

    Original languageEnglish
    Pages (from-to)83-88
    Number of pages6
    JournalMaterials Research Society Symposium - Proceedings
    Volume815
    DOIs
    Publication statusPublished - 2004
    EventSilicon Carbide 2004 - Materials, Processing and Devices - San Francisco, CA, United States
    Duration: Apr 14 2004Apr 15 2004

    All Science Journal Classification (ASJC) codes

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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