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Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing

  • Daisuke Hishitani
  • , Masahiro Horita
  • , Yasuaki Ishikawa
  • , Yosuke Watanabe
  • , Hiroshi Ikenoue
  • , Yukiharu Uraoka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We investigated the formation of SiO2 thin films on polycrystalline silicon thin films by CO2 laser irradiation of perhydropolysilazane. We succeeded in the formation of SiO2 containing few OH groups and having uniform composition in the thickness direction. We considered the effect of CO2 laser irradiation was related to bond vibration.

    Original languageEnglish
    Title of host publication20th International Display Workshops 2013, IDW 2013
    PublisherInternational Display Workshops
    Pages419-422
    Number of pages4
    ISBN (Electronic)9781510827783
    Publication statusPublished - 2013
    Event20th International Display Workshops 2013, IDW 2013 - Sapporo, Japan
    Duration: Dec 3 2013Dec 6 2013

    Publication series

    NameProceedings of the International Display Workshops
    Volume1
    ISSN (Print)1883-2490

    Other

    Other20th International Display Workshops 2013, IDW 2013
    Country/TerritoryJapan
    CitySapporo
    Period12/3/1312/6/13

    UN SDGs

    This output contributes to the following UN Sustainable Development Goals (SDGs)

    1. SDG 3 - Good Health and Well-being
      SDG 3 Good Health and Well-being

    All Science Journal Classification (ASJC) codes

    • Computer Vision and Pattern Recognition
    • Human-Computer Interaction
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Radiology Nuclear Medicine and imaging

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