Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing

Daisuke Hishitani; Masahiro Horita; Yasuaki Ishikawa; Yosuke Watanabe; Hiroshi Ikenoue; Yukiharu Uraoka

Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Yosuke Watanabe, Hiroshi Ikenoue, Yukiharu Uraoka

Department of Gigaphoton Next GLP

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We investigated the formation of SiO2 thin films on polycrystalline silicon thin films by CO2 laser irradiation of perhydropolysilazane. We succeeded in the formation of SiO2 containing few OH groups and having uniform composition in the thickness direction. We considered the effect of CO2 laser irradiation was related to bond vibration.

Original language	English
Title of host publication	20th International Display Workshops 2013, IDW 2013
Publisher	International Display Workshops
Pages	419-422
Number of pages	4
ISBN (Electronic)	9781510827783
Publication status	Published - 2013
Event	20th International Display Workshops 2013, IDW 2013 - Sapporo, Japan Duration: Dec 3 2013 → Dec 6 2013

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Other

Other	20th International Display Workshops 2013, IDW 2013
Country/Territory	Japan
City	Sapporo
Period	12/3/13 → 12/6/13

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Hishitani, D., Horita, M., Ishikawa, Y., Watanabe, Y., Ikenoue, H., & Uraoka, Y. (2013). Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing. In 20th International Display Workshops 2013, IDW 2013 (pp. 419-422). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.

Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing. / Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki et al.
20th International Display Workshops 2013, IDW 2013. International Display Workshops, 2013. p. 419-422 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hishitani, D, Horita, M, Ishikawa, Y, Watanabe, Y, Ikenoue, H & Uraoka, Y 2013, Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing. in 20th International Display Workshops 2013, IDW 2013. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 419-422, 20th International Display Workshops 2013, IDW 2013, Sapporo, Japan, 12/3/13.

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abstract = "We investigated the formation of SiO2 thin films on polycrystalline silicon thin films by CO2 laser irradiation of perhydropolysilazane. We succeeded in the formation of SiO2 containing few OH groups and having uniform composition in the thickness direction. We considered the effect of CO2 laser irradiation was related to bond vibration.",

author = "Daisuke Hishitani and Masahiro Horita and Yasuaki Ishikawa and Yosuke Watanabe and Hiroshi Ikenoue and Yukiharu Uraoka",

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AU - Ikenoue, Hiroshi

AU - Uraoka, Yukiharu

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Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

UN SDGs

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