TY - JOUR
T1 - Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation
AU - Abubakr, Eslam
AU - Ohmagari, Shinya
AU - Zkria, Abdelrahman
AU - Ikenoue, Hiroshi
AU - Pernot, Julien
AU - Yoshitake, Tsuyoshi
N1 - Funding Information:
This work was supported by the Japan Society for the Promotion of Science (JSPS KAKENHI Grant Nos. JP19H02436 and 21K18830), and partially funded by JAEA Nuclear Energy S&T and Human Resource Development Project through concentrating wisdom [grant no. JPJA19B19210378].
Publisher Copyright:
© 2022 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.
PY - 2022
Y1 - 2022
N2 - We report the fabrication of p-n + diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the p-n + homojunction. The current–voltage measurements at room temperature confirmed high conductivity of the induced n+ layer and showed exceptional rectification properties with an ideality factor of 1.07, excellent low on-resistance of 3.7 × 10−2 Ωcm2, and current density over 260 Acm−2 at forward-biasing of 10 V. Furthermore, undetectable leakage-current provides a rectification ratio exceeding 1010 at ±6 V, promoting the junction in UV detection applications.
AB - We report the fabrication of p-n + diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the p-n + homojunction. The current–voltage measurements at room temperature confirmed high conductivity of the induced n+ layer and showed exceptional rectification properties with an ideality factor of 1.07, excellent low on-resistance of 3.7 × 10−2 Ωcm2, and current density over 260 Acm−2 at forward-biasing of 10 V. Furthermore, undetectable leakage-current provides a rectification ratio exceeding 1010 at ±6 V, promoting the junction in UV detection applications.
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U2 - 10.1080/21663831.2022.2083457
DO - 10.1080/21663831.2022.2083457
M3 - Article
AN - SCOPUS:85131951153
SN - 2166-3831
VL - 10
SP - 666
EP - 674
JO - Materials Research Letters
JF - Materials Research Letters
IS - 10
ER -