Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Hongmiao Gao; Rikuta Aoki; Masaya Sasaki; Masanobu Miyao; Taizoh Sadoh

doi:10.23919/IWJT.2017.7966503

Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.

Original language	English
Title of host publication	17th International Workshop on Junction Technology, IWJT 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	21-22
Number of pages	2
ISBN (Electronic)	9784863486263
DOIs	https://doi.org/10.23919/IWJT.2017.7966503
Publication status	Published - Jun 30 2017
Event	17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan Duration: Jun 1 2017 → Jun 2 2017

Publication series

Name	17th International Workshop on Junction Technology, IWJT 2017

Other

Other	17th International Workshop on Junction Technology, IWJT 2017
Country/Territory	Japan
City	Kyoto
Period	6/1/17 → 6/2/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.23919/IWJT.2017.7966503

Cite this

Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017 (pp. 21-22). Article 7966503 (17th International Workshop on Junction Technology, IWJT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2017.7966503

Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. / Gao, Hongmiao; Aoki, Rikuta; Sasaki, Masaya et al.
17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 21-22 7966503 (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gao, H, Aoki, R, Sasaki, M, Miyao, M & Sadoh, T 2017, Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. in 17th International Workshop on Junction Technology, IWJT 2017., 7966503, 17th International Workshop on Junction Technology, IWJT 2017, Institute of Electrical and Electronics Engineers Inc., pp. 21-22, 17th International Workshop on Junction Technology, IWJT 2017, Kyoto, Japan, 6/1/17. https://doi.org/10.23919/IWJT.2017.7966503

Gao H, Aoki R, Sasaki M, Miyao M, Sadoh T. Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 21-22. 7966503. (17th International Workshop on Junction Technology, IWJT 2017). doi: 10.23919/IWJT.2017.7966503

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abstract = "Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.",

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Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

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