TY - JOUR
T1 - Formation of microcrystalline diamond using a low-pressure inductively coupled plasma assisted by thermal decomposition of di-t-alkyl peroxide
AU - Ito, Haruhiko
AU - Teii, Kungen
AU - Ito, Masafumi
AU - Hori, Masaru
N1 - Funding Information:
The authors thank H. Funakoshi (ROHM Corp., Ltd.), M. Ishikawa (Toyota Motor Corp.), R. Mizuno (Brother Industries Ltd.), Y. Sugihara (NOF Corp.) and Y. Miyata (Nagoya Municipal Industrial Research Institute) for fruitful discussions and comments. The authors would also like to thank Associate Professor M. Hiramatsu of Meijo University for the Raman spectroscope. This work was supported by a Grant-in-Aid for Scientific Research (A) from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2007/2
Y1 - 2007/2
N2 - Microcrystalline diamond has been successfully synthesized in a low-pressure inductively coupled plasma using di-t-alkyl peroxide. Di-t-alkyl peroxides are thermally decomposed into acetones and methyl radicals, which presumably serve as precursors for the formation of diamond on the silicon substrate at 943 K and 993 K. The deposits on the substrate were examined by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. It was found that the deposits contained a microcrystalline diamond phase even at a low pressure of 11 Pa. Diamond formation over a large area in low-pressure plasmas has been demonstrated by the present novel diamond deposition process using di-t-alkyl peroxide thermally decomposed as a feed gas.
AB - Microcrystalline diamond has been successfully synthesized in a low-pressure inductively coupled plasma using di-t-alkyl peroxide. Di-t-alkyl peroxides are thermally decomposed into acetones and methyl radicals, which presumably serve as precursors for the formation of diamond on the silicon substrate at 943 K and 993 K. The deposits on the substrate were examined by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. It was found that the deposits contained a microcrystalline diamond phase even at a low pressure of 11 Pa. Diamond formation over a large area in low-pressure plasmas has been demonstrated by the present novel diamond deposition process using di-t-alkyl peroxide thermally decomposed as a feed gas.
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U2 - 10.1016/j.diamond.2006.07.007
DO - 10.1016/j.diamond.2006.07.007
M3 - Article
AN - SCOPUS:33846270050
SN - 0925-9635
VL - 16
SP - 393
EP - 396
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 2
ER -