Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Kento Okamoto; Toshifumi Kikuchi; Akihiro Ikeda; Hiroshi Ikenoue; Tanemasa Asano

doi:10.7567/1347-4065/ab12c3

Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10^-6 Ωcm² without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

Original language	English
Article number	SDDF13
Journal	Japanese journal of applied physics
Volume	58
Issue number	SD
DOIs	https://doi.org/10.7567/1347-4065/ab12c3
Publication status	Published - 2019

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/1347-4065/ab12c3

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title = "Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source",

abstract = "The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.",

author = "Kento Okamoto and Toshifumi Kikuchi and Akihiro Ikeda and Hiroshi Ikenoue and Tanemasa Asano",

note = "Funding Information: This work is supported in part by Grants-in-Aid for Scientific Research, KAKENHI, (No. JP17K06387 and No. JP16H02342) from the Japan Society for the Promotion of Science. A part of this work was carried out using the facility of Department of Gigaphoton Next GLP. Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

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doi = "10.7567/1347-4065/ab12c3",

language = "English",

volume = "58",

journal = "Japanese journal of applied physics",

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publisher = "The Japan Society of Applied Physics",

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TY - JOUR

T1 - Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

AU - Okamoto, Kento

AU - Kikuchi, Toshifumi

AU - Ikeda, Akihiro

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

N1 - Funding Information: This work is supported in part by Grants-in-Aid for Scientific Research, KAKENHI, (No. JP17K06387 and No. JP16H02342) from the Japan Society for the Promotion of Science. A part of this work was carried out using the facility of Department of Gigaphoton Next GLP. Publisher Copyright: © 2019 The Japan Society of Applied Physics.

PY - 2019

Y1 - 2019

N2 - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

AB - The effect of laser doping on the contact resistance of ohmic contact to 4H-SiC has been investigated. Laser doping was performed by irradiating a pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the C-face were investigated. The doping was carried out while keeping the sample at room temperature. The experimental results suggest that the contact made of Ti/Al can achieve specific contact resistance as low as 4.0 × 10-6 Ωcm2 without additional heat treatment. The contact resistance is lower than that reported for ohmic contacts formed using ion implantation.

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - SD

M1 - SDDF13

ER -

Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Abstract

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