TY - GEN
T1 - Formation of large grain SiGe on insulator by Si segregation in seedless-rapid-melting process
AU - Kato, R.
AU - Kurosawa, M.
AU - Matsumura, R.
AU - Tojo, Y.
AU - Sadoh, T.
AU - Miyao, M.
PY - 2013
Y1 - 2013
N2 - Rapid-melting growth of SiGe stripes on insulator without any crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.
AB - Rapid-melting growth of SiGe stripes on insulator without any crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.
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U2 - 10.1149/05009.0431ecst
DO - 10.1149/05009.0431ecst
M3 - Conference contribution
AN - SCOPUS:84885704471
SN - 9781607683575
T3 - ECS Transactions
SP - 431
EP - 436
BT - SiGe, Ge, and Related Compounds 5
PB - Electrochemical Society Inc.
T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -