Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)

R. Matsumura; Y. Kai; H. Chikita; T. Sadoh; M. Miyao

doi:10.1149/06103.0097ecst

Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)

R. Matsumura, Y. Kai, H. Chikita, T. Sadoh, M. Miyao

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

Abstract

To realize next generation thin-film-transistors (TFTs), seedless rapidmelting growth of Ge on insulator is investigated. By rapid-thermal annealing (RTA) of amorphous GeSn (a-GeSn) layers on insulating substrates at a temperature between the solidification point and the melting point, GeSn layers melt incompletely, which generates a limited number of solid nuclei as residue. Once cooling starts, liquid-phase epitaxial growth occurs from these nuclei, which results in growth of large-grain crystals. Since segregation coefficient of Sn in Ge is very small (∼0.02), almost all Sn atoms segregate at edges of the grown regions. As a result, almost Snfree (≤1%) large Ge crystal grains are achieved on insulating substrates by a self-organizing process.

Original language	English
Pages (from-to)	97-100
Number of pages	4
Journal	ECS Transactions
Volume	61
Issue number	3
DOIs	https://doi.org/10.1149/06103.0097ecst
Publication status	Published - 2014
Event	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States Duration: May 11 2014 → May 15 2014

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1149/06103.0097ecst

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title = "Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)",

abstract = "To realize next generation thin-film-transistors (TFTs), seedless rapidmelting growth of Ge on insulator is investigated. By rapid-thermal annealing (RTA) of amorphous GeSn (a-GeSn) layers on insulating substrates at a temperature between the solidification point and the melting point, GeSn layers melt incompletely, which generates a limited number of solid nuclei as residue. Once cooling starts, liquid-phase epitaxial growth occurs from these nuclei, which results in growth of large-grain crystals. Since segregation coefficient of Sn in Ge is very small (∼0.02), almost all Sn atoms segregate at edges of the grown regions. As a result, almost Snfree (≤1%) large Ge crystal grains are achieved on insulating substrates by a self-organizing process.",

author = "R. Matsumura and Y. Kai and H. Chikita and T. Sadoh and M. Miyao",

note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society.; International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "10.1149/06103.0097ecst",

language = "English",

volume = "61",

pages = "97--100",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)

AU - Matsumura, R.

AU - Kai, Y.

AU - Chikita, H.

AU - Sadoh, T.

AU - Miyao, M.

PY - 2014

Y1 - 2014

N2 - To realize next generation thin-film-transistors (TFTs), seedless rapidmelting growth of Ge on insulator is investigated. By rapid-thermal annealing (RTA) of amorphous GeSn (a-GeSn) layers on insulating substrates at a temperature between the solidification point and the melting point, GeSn layers melt incompletely, which generates a limited number of solid nuclei as residue. Once cooling starts, liquid-phase epitaxial growth occurs from these nuclei, which results in growth of large-grain crystals. Since segregation coefficient of Sn in Ge is very small (∼0.02), almost all Sn atoms segregate at edges of the grown regions. As a result, almost Snfree (≤1%) large Ge crystal grains are achieved on insulating substrates by a self-organizing process.

AB - To realize next generation thin-film-transistors (TFTs), seedless rapidmelting growth of Ge on insulator is investigated. By rapid-thermal annealing (RTA) of amorphous GeSn (a-GeSn) layers on insulating substrates at a temperature between the solidification point and the melting point, GeSn layers melt incompletely, which generates a limited number of solid nuclei as residue. Once cooling starts, liquid-phase epitaxial growth occurs from these nuclei, which results in growth of large-grain crystals. Since segregation coefficient of Sn in Ge is very small (∼0.02), almost all Sn atoms segregate at edges of the grown regions. As a result, almost Snfree (≤1%) large Ge crystal grains are achieved on insulating substrates by a self-organizing process.

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JO - ECS Transactions

JF - ECS Transactions

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T2 - International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)

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