Formation of high quality β-FeSi2 by pre-amorphization- enhanced diffusion

Y. Murakami, A. Kenjo, T. Sadoh, T. Yoshitake, M. Miyao

Research output: Contribution to journalConference articlepeer-review


Effects of Ar+ ion irradiation on solid-phase growth of β-FeSi2 have been investigated. Si substrates were amorphized with Ar+ ions (20 keV) before Fe (15 nm) deposition to form Fe(15 nm)/a-Si/c-Si stacked structures. As a reference, Fe/c-Si stacked structures were prepared. In the initial stage of annealing at 800°C, β-FeSi 2 formation was enhanced for pre-amorphized samples, which was due to the enhanced diffusion of silicidation species. In the long time annealing, β-FeSi2 formation proceeded by thermal equilibrium diffusion, and the formation rate was not affected by pre-amorphization. Crystal quality of β-FeSi2 was improved by pre-amorphization. The pre-amorphization enhanced diffusion is useful for formation of high quality β-FeSi2 thin films.

Original languageEnglish
Pages (from-to)201-205
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
EventRadiation Effects and Ion-Beam Processing of Materials - Boston, MA., United States
Duration: Dec 1 2003Dec 5 2003

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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