Formation of graded SiGe on insulator by segregation-controlled rapid-melting-growth

R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Formation of laterally-graded single-crystal SiGe-on-insulator structures by rapid-melting-growth of a-SiGe is investigated. From micro-probe Raman scattering spectroscopy measurements, it is revealed that the Si concentration profiles in grown SiGe layers are significantly affected by the growth conditions and sample sizes. Based on the systematical analysis of the phenomena, effects of the growth rate on Si segregation kinetics in rapid-melting growth are clarified. These findings are expected to be useful to obtain epitaxial templates with laterally-variable lattice constants for 2-dimensional integration of various functional devices on an Si-platform.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages747-751
Number of pages5
Edition9
ISBN (Print)9781607683575
DOIs
Publication statusPublished - 2013
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • General Engineering

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