Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

Ichiro Mizushima; Taizoh Sadoh; Masanobu Miyao

doi:10.1109/IWJT.2013.6644498

Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

Ichiro Mizushima, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013
Publisher	IEEE Computer Society
Pages	30-31
Number of pages	2
DOIs	https://doi.org/10.1109/IWJT.2013.6644498
Publication status	Published - 2013
Event	2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan Duration: Jun 6 2013 → Jun 7 2013

Other

Other	2013 13th International Workshop on Junction Technology, IWJT 2013
Country/Territory	Japan
City	Kyoto
Period	6/6/13 → 6/7/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/IWJT.2013.6644498

Cite this

Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. / Mizushima, Ichiro; Sadoh, Taizoh; Miyao, Masanobu.
Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. IEEE Computer Society, 2013. p. 30-31 6644498.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mizushima, I, Sadoh, T & Miyao, M 2013, Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. in Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013., 6644498, IEEE Computer Society, pp. 30-31, 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan, 6/6/13. https://doi.org/10.1109/IWJT.2013.6644498

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author = "Ichiro Mizushima and Taizoh Sadoh and Masanobu Miyao",

year = "2013",

doi = "10.1109/IWJT.2013.6644498",

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BT - Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013

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ER -

Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

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All Science Journal Classification (ASJC) codes

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