TY - JOUR
T1 - Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization
AU - Kato, Yoshimine
AU - Goto, Masaki
AU - Sato, Ryota
AU - Yamada, Kazuhiro
AU - Koga, Akira
AU - Teii, Kungen
AU - Srey, Chenda
AU - Tanaka, Satoru
N1 - Funding Information:
The authors would like to thank T. Horikawa for helping the experiments. This work was supported by a Grant-in-Aid for Scientific Research (KAKENHI) (C) from the Japan Society for the Promotion of Science .
PY - 2011/11/25
Y1 - 2011/11/25
N2 - Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2% CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8% CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.
AB - Epitaxial 3C-SiC (β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH4 gas concentration diluted in H2 gas are varied from 1000 to 1200°C and from 2 to 8vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy. For 2% CH4, epitaxial 3C-SiC about 10nm thick is grown only when the temperature is increased to 1200°C, while polycrystalline 3C-SiC is grown for temperatures less than 1200°C. For 8% CH4, epitaxial 3C-SiC is grown even for temperatures less than 1200°C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers.
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U2 - 10.1016/j.surfcoat.2011.04.021
DO - 10.1016/j.surfcoat.2011.04.021
M3 - Article
AN - SCOPUS:80055108421
SN - 0257-8972
VL - 206
SP - 990
EP - 993
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
IS - 5
ER -