Formation of β-FeSi2-xGex by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]n multilayered structure

Taizoh Sadoh, Masakazu Owatari, Yuji Murakami, Atsushi Kenjo, Tsuyoshi Yoshitake, Masaru Itakura, Masanobu Miyao

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1 Citation (Scopus)


The solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n (n = 1, 2, 4; total thickness: 500 nm) multilayered structures has been investigated. After annealing at 700°C, [a-SiGe/polycrystalline β-FeSi2-xGex]n (x = 0.5, 0.4, 0.2 for n = 1, 2, 4, respectively) multilayered structures were formed. From the analysis of X-ray diffraction spectra, it was found that the lattice constants of β-FeSi1.5Ge0.5 changed from those of relaxed β-FeSi2 by 0.4-0.5%. The change decreased with increasing n, which was due to the segregation of Ge atoms from the a-Fe 0.4Si0.5Ge0.1 layers to the a-Si layers becoming larger with increasing n. After annealing at 800°C, Ge atoms were completely swept out from the β-FeSi2-xGex lattice. In addition, the agglomeration of βFeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge 0.3 were formed. This technique for the formation of βFeSi 2-xGex is expected to be useful for energy gap modulation for advanced optoelectrical devices.

Original languageEnglish
Pages (from-to)1879-1881
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - Apr 2004

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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