Formation of β-FeSi_<2-x>Ge_x by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]_n multilayered structure

T. Sadoh

doi:10.1143/JJAP.43.1879

Formation of β-FeSi_<2-x>Ge_x by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]_n multilayered structure

Translated title of the contribution: Formation of β-FeSi_<2-x>Ge_x by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]_n multilayered structure

T. Sadoh

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Translated title of the contribution	Formation of β-FeSi_<2-x>Ge_x by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]_n multilayered structure
Original language	Undefined/Unknown
Pages (from-to)	1879-1881
Number of pages	3
Journal	Jpn. J. Appl. Phys.
Volume	43
Issue number	4
DOIs	https://doi.org/10.1143/JJAP.43.1879
Publication status	Published - 2004

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10.1143/JJAP.43.1879

http://dx.doi.org/10.1143/JJAP.43.1879

Cite this

@article{e3b293a0d8c740e3be0081fab076ddc6,

title = "Formation of β-FeSi_<2-x>Ge_x by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]_n multilayered structure",

author = "T. Sadoh",

year = "2004",

doi = "10.1143/JJAP.43.1879",

language = "未定義/不明",

volume = "43",

pages = "1879--1881",

journal = "Jpn. J. Appl. Phys.",

number = "4",

}