Formation mechanism of twin boundaries during crystal growth of silicon

Kentaro Kutsukake, Takuro Abe, Noritaka Usami, Kozo Fujiwara, Kohei Morishita, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force.

Original languageEnglish
Pages (from-to)556-559
Number of pages4
JournalScripta Materialia
Issue number6
Publication statusPublished - Sept 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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