Formation mechanism of twin boundaries during crystal growth of silicon

Kentaro Kutsukake; Takuro Abe; Noritaka Usami; Kozo Fujiwara; Kohei Morishita; Kazuo Nakajima

doi:10.1016/j.scriptamat.2011.06.028

Formation mechanism of twin boundaries during crystal growth of silicon

Kentaro Kutsukake, Takuro Abe, Noritaka Usami, Kozo Fujiwara, Kohei Morishita, Kazuo Nakajima

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force.

Original language	English
Pages (from-to)	556-559
Number of pages	4
Journal	Scripta Materialia
Volume	65
Issue number	6
DOIs	https://doi.org/10.1016/j.scriptamat.2011.06.028
Publication status	Published - Sept 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2011.06.028

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title = "Formation mechanism of twin boundaries during crystal growth of silicon",

abstract = "The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force.",

author = "Kentaro Kutsukake and Takuro Abe and Noritaka Usami and Kozo Fujiwara and Kohei Morishita and Kazuo Nakajima",

note = "Funding Information: This work was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan , the New Energy and Industrial Technology Development Organization (NEDO) and Nippon Sheet Glass Foundation for Materials Science and Engineering (NSG Foundation).",

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T1 - Formation mechanism of twin boundaries during crystal growth of silicon

AU - Kutsukake, Kentaro

AU - Abe, Takuro

AU - Usami, Noritaka

AU - Fujiwara, Kozo

AU - Morishita, Kohei

AU - Nakajima, Kazuo

N1 - Funding Information: This work was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan , the New Energy and Industrial Technology Development Organization (NEDO) and Nippon Sheet Glass Foundation for Materials Science and Engineering (NSG Foundation).

PY - 2011/9

Y1 - 2011/9

N2 - The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force.

AB - The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force.

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JO - Scripta Materialia

JF - Scripta Materialia

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Formation mechanism of twin boundaries during crystal growth of silicon

Abstract

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