Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP

Yoshihiro Kangawa; Chikako Kojima; Noriyuki Kuwano; Kensuke Oki

doi:10.1143/JJAP.38.40

Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP

Yoshihiro Kangawa, Chikako Kojima, Noriyuki Kuwano, Kensuke Oki

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the morphology of antiphase boundaries (APBs) and their formation mechanism in CuAu-I type ordered InGaAs grown on a vicinal (110)InP substrate. In InGaAs grown at 380°C, APBs are formed parallel to (110) by the flow of one-monolayer steps. In InGaAs grown at 450°C, the normal directions of APBs arc slightly tilted toward [011] or [001] from (110) and some APBs show a hairpin shape. New formation mechanisms of these APBs are proposed.

Original language	English
Pages (from-to)	40-41
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.38.40
Publication status	Published - Jan 1 1999

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.38.40

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abstract = "We have studied the morphology of antiphase boundaries (APBs) and their formation mechanism in CuAu-I type ordered InGaAs grown on a vicinal (110)InP substrate. In InGaAs grown at 380°C, APBs are formed parallel to (110) by the flow of one-monolayer steps. In InGaAs grown at 450°C, the normal directions of APBs arc slightly tilted toward [011] or [001] from (110) and some APBs show a hairpin shape. New formation mechanisms of these APBs are proposed.",

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AU - Kangawa, Yoshihiro

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AU - Kuwano, Noriyuki

AU - Oki, Kensuke

PY - 1999/1/1

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N2 - We have studied the morphology of antiphase boundaries (APBs) and their formation mechanism in CuAu-I type ordered InGaAs grown on a vicinal (110)InP substrate. In InGaAs grown at 380°C, APBs are formed parallel to (110) by the flow of one-monolayer steps. In InGaAs grown at 450°C, the normal directions of APBs arc slightly tilted toward [011] or [001] from (110) and some APBs show a hairpin shape. New formation mechanisms of these APBs are proposed.

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Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP

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