TY - JOUR
T1 - Formation mechanism of Al-segregated region in InAlAs/(1 1 0)InP
AU - Kangawa, Y.
AU - Wakizono, K.
AU - Kuwano, N.
AU - Oki, K.
AU - Ito, T.
N1 - Funding Information:
This work was supported in part by JSPS Research for the Future Programs in the Area of Atomic Scale Surface and Interface Dynamics and by a Grant-in-Aid for Scientific Research (No. 09242106 and No. 10450234) from the Ministry of Education, Science, Sports and Culture. We are grateful to Dr. O. Ueda and Mr. Y. Nakata of Fujitsu Laboratories Ltd., for providing the specimens of InAlAs alloys as well as useful comments.
PY - 2001/7/2
Y1 - 2001/7/2
N2 - We studied the formation mechanism of Al-segregated regions in InAlAs/(1 1 0) InP by transmission electron microscopy (TEM). It is found that the Al-segregated regions observed as dark bands in the TEM image thread upward at certain intervals. The intervals of the regions agree well with the spaces estimated from the distances between one-monolayer steps (1-MLSs) on the substrate surface. This suggests that the 1-MLSs play an important role for nucleation of the Al-segregated region. Based on this finding, we also propose a model for the nucleation mechanism.
AB - We studied the formation mechanism of Al-segregated regions in InAlAs/(1 1 0) InP by transmission electron microscopy (TEM). It is found that the Al-segregated regions observed as dark bands in the TEM image thread upward at certain intervals. The intervals of the regions agree well with the spaces estimated from the distances between one-monolayer steps (1-MLSs) on the substrate surface. This suggests that the 1-MLSs play an important role for nucleation of the Al-segregated region. Based on this finding, we also propose a model for the nucleation mechanism.
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U2 - 10.1016/S0022-0248(01)01113-7
DO - 10.1016/S0022-0248(01)01113-7
M3 - Article
AN - SCOPUS:0035398272
SN - 0022-0248
VL - 229
SP - 164
EP - 168
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -