Formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes

Y. Ikoma, T. Tada, K. Uchiyama, F. Watanabe, T. Motooka

    Research output: Contribution to journalConference articlepeer-review

    10 Citations (Scopus)

    Abstract

    We have investigated the formation and the current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on Si(100). The high-resolution transmission electron microscopy observation showed that SiC/Si-dot/SiC structures were epitaxially grown on Si(100) at the substrate temperatures of 800°C for SiC and 700°C for Si-dot growth. The current-voltage characteristics were measured by an atomic force microscope using a gold-coated conductive cantilever. Negative resistance regions were observed in the current-voltage curves from the dots. The numerical calculations showed that the negative resistance was due to the resonant tunneling of the electron wave through the double barrier structure.

    Original languageEnglish
    Pages (from-to)157-164
    Number of pages8
    JournalSolid State Phenomena
    Volume78-79
    DOIs
    Publication statusPublished - 2001
    Event6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, Japan
    Duration: Nov 12 2000Nov 16 2000

    All Science Journal Classification (ASJC) codes

    • Atomic and Molecular Physics, and Optics
    • General Materials Science
    • Condensed Matter Physics

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