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Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET
Y. Uryu,
T. Asano
Center for Japan-Egypt Cooperation in Science and Technology(E-JUST Center)
Research output
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Article
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peer-review
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Citation (Scopus)
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Engineering
Floating Gate
100%
Silicon on Insulator
66%
Metal-Oxide-Semiconductor Field-Effect Transistor
66%
Images
33%
Complementary Metal-Oxide-Semiconductor
33%
Integration
33%
Sensing Device
33%
Injection Efficiency
33%
Channel Region
33%
Silicon on Insulator Technology
33%