First-principles study of semiconducting clathrate Ba 8Al 16Ge 30

K. Akai, T. Uemura, K. Kishimoto, T. Tanaka, H. Kurisu, S. Yamamoto, T. Koyanagi, K. Koga, H. Anno, M. Matsuura

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We calculated electronic structures of Ba 8Al 16Ge 30 in some Al-Ge framework configurations without nearest-neighbor Al-Al bonds by using a first-principles method. The calculated band structures are similar in outline but different in detail. We also calculated thermoelectric properties by using the electronic structures to analyze the experimental results on a sintered Ba 8Al 16Ge 30 sample. The calculated properties nearly agree with the experimental results; however, the calculated temperature dependences of electrical conductivity are slightly different from one another, because of differences in electronic structure. In this paper, we discuss the temperature dependence from the viewpoints of nonparabolic band effects.

Original languageEnglish
Pages (from-to)1412-1417
Number of pages6
JournalJournal of Electronic Materials
Volume38
Issue number7
DOIs
Publication statusPublished - Jul 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'First-principles study of semiconducting clathrate Ba 8Al 16Ge 30'. Together they form a unique fingerprint.

Cite this