TY - GEN
T1 - First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN
AU - Shiraishi, Kenji
AU - Sekiguchi, Kazuki
AU - Shirakawa, Hiroki
AU - Chokawa, Kenta
AU - Araidai, Masaaki
AU - Kangawa, Yoshihiro
AU - Kakimoto, Koichi
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2017
Y1 - 2017
N2 - We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH3)3 (X = Ga, Al, In) at finite temperatures and whether the (CH3)3 AlNH2 adduct can be formed or not. Our calculated results show that (CH3)2 GaNH2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH3)2AINH2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) almost decomposes into Ga gas on growth surface by the assistance of H2 carrier gas instead of (CH3)2GaNH2 adduct formation. Moreover, in case of InN MOVPE, (CH3)2lnNH2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H2 carrier gas.
AB - We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH3)3 (X = Ga, Al, In) at finite temperatures and whether the (CH3)3 AlNH2 adduct can be formed or not. Our calculated results show that (CH3)2 GaNH2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH3)2AINH2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) almost decomposes into Ga gas on growth surface by the assistance of H2 carrier gas instead of (CH3)2GaNH2 adduct formation. Moreover, in case of InN MOVPE, (CH3)2lnNH2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H2 carrier gas.
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U2 - 10.1149/08001.0295ecst
DO - 10.1149/08001.0295ecst
M3 - Conference contribution
AN - SCOPUS:85050015761
SN - 9781623324704
T3 - ECS Transactions
SP - 295
EP - 301
BT - ECS Transactions
A2 - Misra, Durga
A2 - De Gendt, Stefan
A2 - Housa, Michel
A2 - Kita, Koji
A2 - Landheer, Dolf
PB - Electrochemical Society Inc.
T2 - 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
Y2 - 1 October 2017 through 5 October 2017
ER -