Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg 1/2Ti 1/2)O 3 films

Takahiro Oikawa; Shintaro Yasui; Takayuki Watanabe; Hisato Yabuta; Yoshitaka Ehara; Tetsuro Fukui; Hiroshi Funakubo

doi:10.1143/JJAP.51.09LA04

Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg _1/2Ti _1/2)O ₃ films

Takahiro Oikawa, Shintaro Yasui, Takayuki Watanabe, Hisato Yabuta, Yoshitaka Ehara, Tetsuro Fukui, Hiroshi Funakubo

Applied Energy Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The origin of the ferroelectricity of Bi(Mg _1/2Ti _1/2)O ₃ films was investigated. Epitaxial Bi(Mg _1/2Ti _1/2)O ₃ films with film thicknesses of 50 to 800nm were grown on (111)cSrRuO ₃/(111)SrTiO ₃ substrates by pulsed laser deposition. A Bi(Mg _1/2Ti _1/2)O ₃ film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398nm and α = 89:8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg _1/2Ti _1/2)O ₃ films at room temperature were almost constant at about 250, 60 μC/cm ², and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg _1/2Ti _1/2)O ₃ films are ferroelectric.

Original language	English
Article number	09LA04
Journal	Japanese journal of applied physics
Volume	51
Issue number	9 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.09LA04
Publication status	Published - Sept 2012

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{b75b25a564bb4489b6d0f73b6a1c41ba,

title = "Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg 1/2Ti 1/2)O 3 films",

abstract = "The origin of the ferroelectricity of Bi(Mg 1/2Ti 1/2)O 3 films was investigated. Epitaxial Bi(Mg 1/2Ti 1/2)O 3 films with film thicknesses of 50 to 800nm were grown on (111)cSrRuO 3/(111)SrTiO 3 substrates by pulsed laser deposition. A Bi(Mg 1/2Ti 1/2)O 3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398nm and α = 89:8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg 1/2Ti 1/2)O 3 films at room temperature were almost constant at about 250, 60 μC/cm 2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg 1/2Ti 1/2)O 3 films are ferroelectric.",

author = "Takahiro Oikawa and Shintaro Yasui and Takayuki Watanabe and Hisato Yabuta and Yoshitaka Ehara and Tetsuro Fukui and Hiroshi Funakubo",

year = "2012",

month = sep,

doi = "10.1143/JJAP.51.09LA04",

language = "English",

volume = "51",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "9 PART 2",

}

TY - JOUR

T1 - Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg 1/2Ti 1/2)O 3 films

AU - Oikawa, Takahiro

AU - Yasui, Shintaro

AU - Watanabe, Takayuki

AU - Yabuta, Hisato

AU - Ehara, Yoshitaka

AU - Fukui, Tetsuro

AU - Funakubo, Hiroshi

PY - 2012/9

Y1 - 2012/9

N2 - The origin of the ferroelectricity of Bi(Mg 1/2Ti 1/2)O 3 films was investigated. Epitaxial Bi(Mg 1/2Ti 1/2)O 3 films with film thicknesses of 50 to 800nm were grown on (111)cSrRuO 3/(111)SrTiO 3 substrates by pulsed laser deposition. A Bi(Mg 1/2Ti 1/2)O 3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398nm and α = 89:8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg 1/2Ti 1/2)O 3 films at room temperature were almost constant at about 250, 60 μC/cm 2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg 1/2Ti 1/2)O 3 films are ferroelectric.

AB - The origin of the ferroelectricity of Bi(Mg 1/2Ti 1/2)O 3 films was investigated. Epitaxial Bi(Mg 1/2Ti 1/2)O 3 films with film thicknesses of 50 to 800nm were grown on (111)cSrRuO 3/(111)SrTiO 3 substrates by pulsed laser deposition. A Bi(Mg 1/2Ti 1/2)O 3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398nm and α = 89:8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg 1/2Ti 1/2)O 3 films at room temperature were almost constant at about 250, 60 μC/cm 2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg 1/2Ti 1/2)O 3 films are ferroelectric.

UR - http://www.scopus.com/inward/record.url?scp=84867750780&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867750780&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.09LA04

DO - 10.1143/JJAP.51.09LA04

M3 - Article

AN - SCOPUS:84867750780

SN - 0021-4922

VL - 51

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 9 PART 2

M1 - 09LA04

ER -

Film thickness dependence of ferroelectric properties of (111)-Oriented epitaxial Bi(Mg _1/2Ti _1/2)O ₃ films

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