Film formation by motion control of ionized precursors in electric field

Motoaki Adachi, Toshiyuki Fujimoto, Koichi Nakaso, Kikuo Okuyama, Frank G. Shi, Hideki Sato, Toshio Ando, Hideki Tomioka

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm-1 was different between ionized intermediates and nonionized intermediates.

Original languageEnglish
Pages (from-to)1973-1975
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - Sept 27 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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