Film formation by motion control of ionized precursors in electric field

Motoaki Adachi; Toshiyuki Fujimoto; Koichi Nakaso; Kikuo Okuyama; Frank G. Shi; Hideki Sato; Toshio Ando; Hideki Tomioka

doi:10.1063/1.124889

Film formation by motion control of ionized precursors in electric field

Motoaki Adachi, Toshiyuki Fujimoto, Koichi Nakaso, Kikuo Okuyama, Frank G. Shi, Hideki Sato, Toshio Ando, Hideki Tomioka

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O₃ films deposited on SiN and SiO₂ films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm^-1 was different between ionized intermediates and nonionized intermediates.

Original language	English
Pages (from-to)	1973-1975
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	13
DOIs	https://doi.org/10.1063/1.124889
Publication status	Published - Sept 27 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124889

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@article{c973b5eff6534a92a34c08371c923cff,

title = "Film formation by motion control of ionized precursors in electric field",

abstract = "A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm-1 was different between ionized intermediates and nonionized intermediates.",

author = "Motoaki Adachi and Toshiyuki Fujimoto and Koichi Nakaso and Kikuo Okuyama and Shi, {Frank G.} and Hideki Sato and Toshio Ando and Hideki Tomioka",

year = "1999",

month = sep,

day = "27",

doi = "10.1063/1.124889",

language = "English",

volume = "75",

pages = "1973--1975",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Film formation by motion control of ionized precursors in electric field

AU - Adachi, Motoaki

AU - Fujimoto, Toshiyuki

AU - Nakaso, Koichi

AU - Okuyama, Kikuo

AU - Shi, Frank G.

AU - Sato, Hideki

AU - Ando, Toshio

AU - Tomioka, Hideki

PY - 1999/9/27

Y1 - 1999/9/27

N2 - A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm-1 was different between ionized intermediates and nonionized intermediates.

AB - A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm-1 was different between ionized intermediates and nonionized intermediates.

UR - http://www.scopus.com/inward/record.url?scp=0037885122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037885122&partnerID=8YFLogxK

U2 - 10.1063/1.124889

DO - 10.1063/1.124889

M3 - Article

AN - SCOPUS:0037885122

SN - 0003-6951

VL - 75

SP - 1973

EP - 1975

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Film formation by motion control of ionized precursors in electric field

Abstract

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