Filament formation and erasure in molybdenum oxide during resistive switching cycles

Masaki Kudo, Masashi Arita, Yuuki Ohno, Yasuo Takahashi

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.

Original languageEnglish
Article number173504
JournalApplied Physics Letters
Issue number17
Publication statusPublished - Oct 27 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Filament formation and erasure in molybdenum oxide during resistive switching cycles'. Together they form a unique fingerprint.

Cite this