Field-plate structure dependence of current collapse phenomena in high-voltage GaN-HEMTs

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Yasunobu Saito, Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Masakazu Yamaguchi

Research output: Contribution to journalArticlepeer-review

97 Citations (Scopus)


Four types of the field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The on-resistance increase caused by current collapse phenomena is dramatically reduced by the single-gate-FP and dual-FP structures compared with the sourceFP structure, because the gate-edge electric field was reduced by the gate-FP electrode. The dual-FP structure was slightly more effective to suppress the collapse phenomena than the single-gate-FP structure, because the two-step FP structure relaxes the electric-field concentration at the FP edge. These results show that the gate-edge peak strongly affects the on-resistance modulation. Although the FP edge peak also causes the collapse phenomena, its influence is weak.

Original languageEnglish
Article number5471189
Pages (from-to)659-661
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - Jul 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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