Field emission from ion-milled diamond films on Si

Tanemasa Asano, Yoshimichi Oobuchi

Research output: Contribution to journalConference articlepeer-review

50 Citations (Scopus)

Abstract

Diamond grains were grown on Si substrates by plasma-enhanced chemical vapor deposition. Ar ion milling was applied to the diamond/Si structures. It has been found that sharp diamond cones can be formed by ion milling if diamonds are in the form of isolated grains. It has also been found that the field emission current from diamond/Si samples is drastically increased by Ar ion milling and subsequent heat treatment in vacuum.

Original languageEnglish
Pages (from-to)431-434
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number2
DOIs
Publication statusPublished - Mar 1995
EventProceedings of the 7th International Vacuum Microelectronics Conference - Grenoble, Fr
Duration: Jul 4 1994Jul 7 1994

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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