Field emission from an ion irradiated photoresist

Tanemasa Asano, Eiji Shibata, Daisuke Sasaguri, Kenji Makihira, Katsuya Higa

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20 Citations (Scopus)


The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 1016 cm-2. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. For the field emission, a pyramid-like structure is prepared using oxygen-plasma etching and Ar ions are implanted to the pyramid-like structured photoresist. Electron emission of the order of 10-6 A is observed for implanted samples, while no emission is detected from unimplanted samples.

Original languageEnglish
Pages (from-to)L818-L820
JournalJapanese Journal of Applied Physics
Issue number6
Publication statusPublished - 1997

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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