Field-access scheme of bloch line memory

H. Asada; M. Shigenobu; K. Nakamura; N. Yoshimatsu; S. Konishi

doi:10.1109/TMAG.1987.1065765

Field-access scheme of bloch line memory

H. Asada, M. Shigenobu, K. Nakamura, N. Yoshimatsu, S. Konishi

Division of Nuclear Fusion Dynamics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.

Original language	English
Pages (from-to)	2326-2328
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	23
Issue number	5
DOIs	https://doi.org/10.1109/TMAG.1987.1065765
Publication status	Published - Sept 1987

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.1987.1065765

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abstract = "The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.",

author = "H. Asada and M. Shigenobu and K. Nakamura and N. Yoshimatsu and S. Konishi",

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AU - Asada, H.

AU - Shigenobu, M.

AU - Nakamura, K.

AU - Yoshimatsu, N.

AU - Konishi, S.

PY - 1987/9

Y1 - 1987/9

N2 - The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.

AB - The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several 0e and several tens Oe are required for propagating VBL pairs in 5 µm and.5 µm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.

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Field-access scheme of bloch line memory

Abstract

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