TY - JOUR
T1 - Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition
AU - Yoshitake, Tsuyoshi
AU - Nakagauchi, Dai
AU - Nagayama, Kunihito
PY - 2003/7/15
Y1 - 2003/7/15
N2 - The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.
AB - The Fe-Si system has both semiconducting phases, such as β-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.
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U2 - 10.1143/jjap.42.l849
DO - 10.1143/jjap.42.l849
M3 - Letter
AN - SCOPUS:0141495050
SN - 0021-4922
VL - 42
SP - L849-L851
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 7 B
ER -