Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability

Yukio Watanabe; M. Tanamura; Y. Matsumoto; H. Asami; A. Kato

doi:10.1063/1.113524

Ferroelectric/(La,Sr)₂CuO₄ epitaxial heterostructure with high thermal stability

Yukio Watanabe, M. Tanamura, Y. Matsumoto, H. Asami, A. Kato

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O₃/(La,Sr)₂CuO₄ multilayers were grown on SrTiO₃ (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-Å-thick (La,Sr)₂CuO₄ layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.

Original language	English
Pages (from-to)	299
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113524
Publication status	Published - 1995
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.113524

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title = "Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability",

abstract = "Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-{\AA}-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.",

author = "Yukio Watanabe and M. Tanamura and Y. Matsumoto and H. Asami and A. Kato",

year = "1995",

doi = "10.1063/1.113524",

language = "English",

pages = "299",

journal = "Applied Physics Letters",

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T1 - Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability

AU - Watanabe, Yukio

AU - Tanamura, M.

AU - Matsumoto, Y.

AU - Asami, H.

AU - Kato, A.

PY - 1995

Y1 - 1995

N2 - Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-Å-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.

AB - Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100-300-Å-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Ferroelectric/(La,Sr)₂CuO₄ epitaxial heterostructure with high thermal stability

Abstract

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