Ferroelectric P(VDF-TrFE) wrapped InGaAs nanowires for ultralow-power artificial synapses

Pengshan Xie, Yulong Huang, Wei Wang, You Meng, Zhengxun Lai, Fei Wang, Sen Po Yip, Xiuming Bu, Weijun Wang, Dengji Li, Jia Sun, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

The gallop of artificial intelligence ignites urgent demand on information processing systems with ultralow power consumption, reliable multi-parameter control and high operation efficiency. Here, the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) wrapped InGaAs nanowire (NW) artificial synapses capable to operate with record-low subfemtojoule power consumption are presented. The essential synaptic behaviors are mimicked and modulated effectively by adjusting the thickness of top P(VDF-TrFE) films. Moreover, the long-term depression is realized by applying visible light (450 nm) because of the negative photoconductivity of InGaAs nanowires. Combined with optimal P(VDF-TrFE) films, the synaptic devices have the more linear long-term potentiation/depression characteristics and the faster supervised learning process simulated by hardware neural networks. The Pavlovian conditioning is also performed by combining electrical and infrared stimuli. Evidently, these ultralow-operating-power synapses are demonstrated with the brain-like behaviors, effective function modulation, and more importantly, the synergistic photoelectric modulation, which illustrates the promising potentials for neuromorphic computing systems.

Original languageEnglish
Article number106654
JournalNano Energy
Volume91
DOIs
Publication statusPublished - Jan 2022

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • General Materials Science
  • Electrical and Electronic Engineering

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