Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Keisuke Yamamoto; Dong Wang; Hiroshi Nakashima

doi:10.1109/ISTDM.2014.6874625

Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the Φ_BPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	91-92
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874625
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: Jun 2 2014 → Jun 4 2014

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/Territory	Singapore
City	Singapore
Period	6/2/14 → 6/4/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874625

Cite this

Yamamoto, K., Wang, D., & Nakashima, H. (2014). Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 91-92). Article 6874625 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874625

Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. / Yamamoto, Keisuke ; Wang, Dong; Nakashima, Hiroshi.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 91-92 6874625 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, K , Wang, D & Nakashima, H 2014, Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874625, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 91-92, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 6/2/14. https://doi.org/10.1109/ISTDM.2014.6874625

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abstract = "ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.",

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AB - ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.

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Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

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