TY - JOUR
T1 - Feasibility study of TlBr semiconductor detectors for PIXE applications
AU - Nogami, Mitsuhiro
AU - Hitomi, Keitaro
AU - Onodera, Toshiyuki
AU - Matsumoto, Kio
AU - Watanabe, Kenichi
AU - Terakawa, Atsuki
AU - Ishii, Keizo
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/8/15
Y1 - 2020/8/15
N2 - Semiconductor detectors for PIXE applications were fabricated using TlBr crystals. The TlBr detectors had a multiple-electrode detector design to minimize the pulse-height loss due to hole trapping. Electrodes containing thallium metal were employed for the TlBr detectors to suppress the polarization phenomena. Energy resolutions of 2.4, 3.3, and 3.8 keV FWHM for 5.9, 22.1, and 59.5 keV photons, respectively, were obtained for a TlBr detector operating at −50 °C.
AB - Semiconductor detectors for PIXE applications were fabricated using TlBr crystals. The TlBr detectors had a multiple-electrode detector design to minimize the pulse-height loss due to hole trapping. Electrodes containing thallium metal were employed for the TlBr detectors to suppress the polarization phenomena. Energy resolutions of 2.4, 3.3, and 3.8 keV FWHM for 5.9, 22.1, and 59.5 keV photons, respectively, were obtained for a TlBr detector operating at −50 °C.
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U2 - 10.1016/j.nimb.2019.10.003
DO - 10.1016/j.nimb.2019.10.003
M3 - Article
AN - SCOPUS:85074491926
SN - 0168-583X
VL - 477
SP - 43
EP - 45
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -