Fe gettering for high-efficiency solar cell fabrication

Takeshi Terakawa; Dong Wang; Hiroshi Nakashima

doi:10.1143/JJAP.44.4060

Fe gettering for high-efficiency solar cell fabrication

Takeshi Terakawa, Dong Wang, Hiroshi Nakashima

Energy Engineering Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The gettering behavior of Fe into Si at 600°C for samples with and without a p⁺ layer was investigated by deep-level transient spectroscopy. These samples contaminated with Fe at 930°C for 4 h at a concentration of 4.6 × 10¹³ cm^-3 were annealed at 600°C to induce gettering. The concentration of Fe atoms in the bulk Si markedly decreased-with annealing time at 600°C. It was found that the gettering site of Fe is not the p⁺ layer but the very thin surface layer.

Original language	English
Pages (from-to)	4060-4061
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.44.4060
Publication status	Published - Jun 2005

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "The gettering behavior of Fe into Si at 600°C for samples with and without a p+ layer was investigated by deep-level transient spectroscopy. These samples contaminated with Fe at 930°C for 4 h at a concentration of 4.6 × 1013 cm-3 were annealed at 600°C to induce gettering. The concentration of Fe atoms in the bulk Si markedly decreased-with annealing time at 600°C. It was found that the gettering site of Fe is not the p+ layer but the very thin surface layer.",

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AU - Wang, Dong

AU - Nakashima, Hiroshi

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AB - The gettering behavior of Fe into Si at 600°C for samples with and without a p+ layer was investigated by deep-level transient spectroscopy. These samples contaminated with Fe at 930°C for 4 h at a concentration of 4.6 × 1013 cm-3 were annealed at 600°C to induce gettering. The concentration of Fe atoms in the bulk Si markedly decreased-with annealing time at 600°C. It was found that the gettering site of Fe is not the p+ layer but the very thin surface layer.

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JF - Japanese Journal of Applied Physics

IS - 6 A

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Fe gettering for high-efficiency solar cell fabrication

Abstract

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