Fe gettering by p+ layer in bifacial Si solar cell fabrication

T. Terakawa; D. Wang; H. Nakashima

doi:10.1016/j.physb.2005.12.061

Fe gettering by p⁺ layer in bifacial Si solar cell fabrication

T. Terakawa
, D. Wang
, H. Nakashima

Energy Engineering Sciences

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5×10¹²-2.0×10 ¹⁴ cm^-3 were annealed at 600 °C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p⁺ layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination <1×10¹³ cm^-3 but effective for the sample with middle level contamination of 1-5×10¹³ cm^-3. In contrast, the samples with p⁺ layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p⁺ layer are discussed in details.

Original language	English
Pages (from-to)	231-235
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.061
Publication status	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2005.12.061

Cite this

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title = "Fe gettering by p+ layer in bifacial Si solar cell fabrication",

abstract = "Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5×1012-2.0×10 14 cm-3 were annealed at 600 °C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p+ layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination <1×1013 cm-3 but effective for the sample with middle level contamination of 1-5×1013 cm-3. In contrast, the samples with p+ layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p+ layer are discussed in details.",

author = "T. Terakawa and D. Wang and H. Nakashima",

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journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

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note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

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T1 - Fe gettering by p+ layer in bifacial Si solar cell fabrication

AU - Terakawa, T.

AU - Wang, D.

AU - Nakashima, H.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5×1012-2.0×10 14 cm-3 were annealed at 600 °C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p+ layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination <1×1013 cm-3 but effective for the sample with middle level contamination of 1-5×1013 cm-3. In contrast, the samples with p+ layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p+ layer are discussed in details.

AB - Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5×1012-2.0×10 14 cm-3 were annealed at 600 °C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p+ layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination <1×1013 cm-3 but effective for the sample with middle level contamination of 1-5×1013 cm-3. In contrast, the samples with p+ layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p+ layer are discussed in details.

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DO - 10.1016/j.physb.2005.12.061

M3 - Conference article

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VL - 376-377

SP - 231

EP - 235

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Fe gettering by p⁺ layer in bifacial Si solar cell fabrication

Abstract

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