Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems

Amita Goyal; Tatsuya Iwasaki; Naho Itagaki; Tohru Den; Hideya Kumomi

Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems

Amita Goyal, Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μ_FE ∼ 6cm²/V-s, on/off ∼ 10 ¹⁰), In-Zn-O (μ_FE ∼ 26cm²/V-s, on/off ∼ 10¹⁰), In-Si-O (μ_FE ∼ 3 cm²/V-s, on/off ∼ 10⁹). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, m_e, of X-O, except when X is a transition metal element.

Original language	English
Title of host publication	Transparent Conductors and Semiconductors for Optoelectronics
Pages	43-48
Number of pages	6
Publication status	Published - 2009
Externally published	Yes
Event	2009 MRS Fall Meeting - Boston, MA, United States Duration: Nov 30 2009 → Dec 2 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1109
ISSN (Print)	0272-9172

Other

Other	2009 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/30/09 → 12/2/09

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems. / Goyal, Amita; Iwasaki, Tatsuya; Itagaki, Naho et al.
Transparent Conductors and Semiconductors for Optoelectronics. 2009. p. 43-48 (Materials Research Society Symposium Proceedings; Vol. 1109).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Goyal, A, Iwasaki, T, Itagaki, N, Den, T & Kumomi, H 2009, Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems. in Transparent Conductors and Semiconductors for Optoelectronics. Materials Research Society Symposium Proceedings, vol. 1109, pp. 43-48, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.

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abstract = "Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.",

author = "Amita Goyal and Tatsuya Iwasaki and Naho Itagaki and Tohru Den and Hideya Kumomi",

year = "2009",

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AU - Iwasaki, Tatsuya

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AU - Den, Tohru

AU - Kumomi, Hideya

PY - 2009

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N2 - Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.

AB - Various kinds of thin film transistors (TFTs) with In-X-O (X= B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo and Sn) channel layer were studied using combinatorial technique. The channel layers were deposited by sputtering on unheated substrates and post annealing of TFTs was carried out at 300°C in air for 1 hour. Most of the In-X-O TFTs showed the switching behavior except for TFTs with In-Mo-O and In-Sn-O channel layer. High TFT performance is obtained in the case of In-Ge-O (μFE ∼ 6cm2/V-s, on/off ∼ 10 10), In-Zn-O (μFE ∼ 26cm2/V-s, on/off ∼ 1010), In-Si-O (μFE ∼ 3 cm2/V-s, on/off ∼ 109). The electron mobility of In-X-O shows inverse correlation with the electron effective mass, me, of X-O, except when X is a transition metal element.

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Favorable elements for an indium-based amorphous oxide TFT channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) systems

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