Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route

Murugan Vigneshwaran; Takeshi Ohta; Satoshi Iikubo; Gaurav Kapil; Teresa S. Ripolles; Yuhei Ogomi; Tingli Ma; Shyam S. Pandey; Qing Shen; Taro Toyoda; Kenji Yoshino; Takashi Minemoto; Shuzi Hayase

doi:10.1021/acs.chemmater.6b02315

Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route

Murugan Vigneshwaran, Takeshi Ohta, Satoshi Iikubo, Gaurav Kapil, Teresa S. Ripolles, Yuhei Ogomi, Tingli Ma, Shyam S. Pandey, Qing Shen, Taro Toyoda, Kenji Yoshino, Takashi Minemoto, Shuzi Hayase

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Abstract

The bismuth based perovskite with the structure (CH₃NH₃)₃Bi₂I₉ (MBI) is rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. A relatively higher bandgap of MBI (about 2.1 eV) has been found to be a bottleneck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. We demonstrate the bandgap engineering of novel bismuth based perovskites obtained by in situ sulfur doping of MBI via the thermal decomposition of Bi(xt)₃ (xt = ethyl xanthate) precursor. Colors of the obtained films clearly changed from orange to black when annealed from 80 to 120 °C. Formation of sulfur doped MA₃Bi₂I₉ was confirmed by XRD and the presence of sulfur was confirmed through XPS. In this work, obtained sulfur doped bismuth perovskites exhibited a bandgap of 1.45 eV which is even lower than that of most commonly used lead halide perovskites. Hall-Effect measurements showed that the carrier concentration and mobility are much higher as compared to that of undoped MA₃Bi₂I₉.

Original language	English
Pages (from-to)	6436-6440
Number of pages	5
Journal	Chemistry of Materials
Volume	28
Issue number	18
DOIs	https://doi.org/10.1021/acs.chemmater.6b02315
Publication status	Published - Sept 27 2016
Externally published	Yes

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Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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10.1021/acs.chemmater.6b02315

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Vigneshwaran, M., Ohta, T., Iikubo, S., Kapil, G., Ripolles, T. S., Ogomi, Y., Ma, T., Pandey, S. S., Shen, Q., Toyoda, T., Yoshino, K., Minemoto, T., & Hayase, S. (2016). Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route. Chemistry of Materials, 28(18), 6436-6440. https://doi.org/10.1021/acs.chemmater.6b02315

Vigneshwaran, M, Ohta, T, Iikubo, S, Kapil, G, Ripolles, TS, Ogomi, Y, Ma, T, Pandey, SS, Shen, Q, Toyoda, T, Yoshino, K, Minemoto, T & Hayase, S 2016, 'Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route', Chemistry of Materials, vol. 28, no. 18, pp. 6436-6440. https://doi.org/10.1021/acs.chemmater.6b02315

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title = "Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route",

abstract = "The bismuth based perovskite with the structure (CH3NH3)3Bi2I9 (MBI) is rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. A relatively higher bandgap of MBI (about 2.1 eV) has been found to be a bottleneck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. We demonstrate the bandgap engineering of novel bismuth based perovskites obtained by in situ sulfur doping of MBI via the thermal decomposition of Bi(xt)3 (xt = ethyl xanthate) precursor. Colors of the obtained films clearly changed from orange to black when annealed from 80 to 120 °C. Formation of sulfur doped MA3Bi2I9 was confirmed by XRD and the presence of sulfur was confirmed through XPS. In this work, obtained sulfur doped bismuth perovskites exhibited a bandgap of 1.45 eV which is even lower than that of most commonly used lead halide perovskites. Hall-Effect measurements showed that the carrier concentration and mobility are much higher as compared to that of undoped MA3Bi2I9.",

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T1 - Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route

AU - Vigneshwaran, Murugan

AU - Ohta, Takeshi

AU - Iikubo, Satoshi

AU - Kapil, Gaurav

AU - Ripolles, Teresa S.

AU - Ogomi, Yuhei

AU - Ma, Tingli

AU - Pandey, Shyam S.

AU - Shen, Qing

AU - Toyoda, Taro

AU - Yoshino, Kenji

AU - Minemoto, Takashi

AU - Hayase, Shuzi

PY - 2016/9/27

Y1 - 2016/9/27

N2 - The bismuth based perovskite with the structure (CH3NH3)3Bi2I9 (MBI) is rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. A relatively higher bandgap of MBI (about 2.1 eV) has been found to be a bottleneck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. We demonstrate the bandgap engineering of novel bismuth based perovskites obtained by in situ sulfur doping of MBI via the thermal decomposition of Bi(xt)3 (xt = ethyl xanthate) precursor. Colors of the obtained films clearly changed from orange to black when annealed from 80 to 120 °C. Formation of sulfur doped MA3Bi2I9 was confirmed by XRD and the presence of sulfur was confirmed through XPS. In this work, obtained sulfur doped bismuth perovskites exhibited a bandgap of 1.45 eV which is even lower than that of most commonly used lead halide perovskites. Hall-Effect measurements showed that the carrier concentration and mobility are much higher as compared to that of undoped MA3Bi2I9.

AB - The bismuth based perovskite with the structure (CH3NH3)3Bi2I9 (MBI) is rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. A relatively higher bandgap of MBI (about 2.1 eV) has been found to be a bottleneck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. We demonstrate the bandgap engineering of novel bismuth based perovskites obtained by in situ sulfur doping of MBI via the thermal decomposition of Bi(xt)3 (xt = ethyl xanthate) precursor. Colors of the obtained films clearly changed from orange to black when annealed from 80 to 120 °C. Formation of sulfur doped MA3Bi2I9 was confirmed by XRD and the presence of sulfur was confirmed through XPS. In this work, obtained sulfur doped bismuth perovskites exhibited a bandgap of 1.45 eV which is even lower than that of most commonly used lead halide perovskites. Hall-Effect measurements showed that the carrier concentration and mobility are much higher as compared to that of undoped MA3Bi2I9.

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Facile synthesis and characterization of sulfur doped low bandgap bismuth based perovskites by soluble precursor route

Abstract

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