Facet stability of GaN during tri-halide vapor phase epitaxy: anab initio-based approach

Chemistry

• Halide 100%
• Vapor Phase Epitaxy 100%
• Reaction Temperature 33%
• Surface 33%
• Pressure 33%
• Shape 33%
• Phase Diagrams 33%
• Surface Reconstruction 33%
• Crystal Growth Form 33%

Engineering

• Stability 66%
• Models 33%
• Compute 33%
• Temperature 33%
• Surfaces 33%
• Surface Phase 33%
• Formation Energy 33%
• Create Surface 33%

Material Science

• Surface 33%
• Surface Reconstruction 33%