Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers

S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, D. Wang, H. Nakashima

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	12-13
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2012.ps-1-3
Publication status	Published - 2012
Event	2012 International Conference on Solid State Devices and Materials (SSDM2012) - Kyoto International Conference Center, Kyoto, Japan Duration: Sept 25 2012 → Sept 27 2012

Conference	2012 International Conference on Solid State Devices and Materials (SSDM2012)
Country/Territory	Japan
City	Kyoto
Period	9/25/12 → 9/27/12

Access to Document

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title = "Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers",

author = "S. Kojima and K. Sakamoto and Y. Iwamura and K. Hirayama and K. Yamamoto and D. Wang and H. Nakashima",

year = "2012",

doi = "10.7567/ssdm.2012.ps-1-3",

language = "English",

pages = "12--13",

note = "2012 International Conference on Solid State Devices and Materials (SSDM2012) ; Conference date: 25-09-2012 Through 27-09-2012",

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TY - CONF

T1 - Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers

AU - Kojima, S.

AU - Sakamoto, K.

AU - Iwamura, Y.

AU - Hirayama, K.

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

PY - 2012

Y1 - 2012

U2 - 10.7567/ssdm.2012.ps-1-3

DO - 10.7567/ssdm.2012.ps-1-3

M3 - Paper

SP - 12

EP - 13

T2 - 2012 International Conference on Solid State Devices and Materials (SSDM2012)

Y2 - 25 September 2012 through 27 September 2012

ER -