Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

Terumitsu Tanaka; Hiroki Kurisu; Mitsuru Matsuura; Yoshihiro Shimosato; Shigenobu Okada; Kazunori Oshiro; Hirotaka Fujimori; Setsuo Yamamoto

doi:10.1063/1.2169538

Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

Terumitsu Tanaka, Hiroki Kurisu, Mitsuru Matsuura, Yoshihiro Shimosato, Shigenobu Okada, Kazunori Oshiro, Hirotaka Fujimori, Setsuo Yamamoto

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Well-crystallized Ni-Zn ferrite (Ni0.4 Zn0.6 Fe2 O4) highly oriented ultrathin films were obtained at a substrate temperature of 200 °C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

Original language	English
Article number	08N507
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2169538
Publication status	Published - 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.2169538

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title = "Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method",

abstract = "Well-crystallized Ni-Zn ferrite (Ni0.4 Zn0.6 Fe2 O4) highly oriented ultrathin films were obtained at a substrate temperature of 200 °C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.",

author = "Terumitsu Tanaka and Hiroki Kurisu and Mitsuru Matsuura and Yoshihiro Shimosato and Shigenobu Okada and Kazunori Oshiro and Hirotaka Fujimori and Setsuo Yamamoto",

note = "Funding Information: This research was partly supported by the Venture Business Laboratory of Yamaguchi University.",

year = "2006",

doi = "10.1063/1.2169538",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

AU - Tanaka, Terumitsu

AU - Kurisu, Hiroki

AU - Matsuura, Mitsuru

AU - Shimosato, Yoshihiro

AU - Okada, Shigenobu

AU - Oshiro, Kazunori

AU - Fujimori, Hirotaka

AU - Yamamoto, Setsuo

N1 - Funding Information: This research was partly supported by the Venture Business Laboratory of Yamaguchi University.

PY - 2006

Y1 - 2006

N2 - Well-crystallized Ni-Zn ferrite (Ni0.4 Zn0.6 Fe2 O4) highly oriented ultrathin films were obtained at a substrate temperature of 200 °C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

AB - Well-crystallized Ni-Zn ferrite (Ni0.4 Zn0.6 Fe2 O4) highly oriented ultrathin films were obtained at a substrate temperature of 200 °C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

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DO - 10.1063/1.2169538

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JF - Journal of Applied Physics

IS - 8

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ER -

Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

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