TY - JOUR
T1 - Fabrication of TiN/Ge contact with extremely low electron barrier height
AU - Yamamoto, Keisuke
AU - Harada, Kenji
AU - Yang, Haigui
AU - Wang, Dong
AU - Nakashima, Hiroshi
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/7
Y1 - 2012/7
N2 - We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.
AB - We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n-Ge, the specific contact resistivity was determined to be 7:9 × 10 -6 ωcm 2 for a surface impurity concentration of 3:9 × 10 19 cm -3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO 2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.
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U2 - 10.1143/JJAP.51.070208
DO - 10.1143/JJAP.51.070208
M3 - Article
AN - SCOPUS:84863793846
SN - 0021-4922
VL - 51
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 7 PART 1
M1 - 070208
ER -