Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×10¹⁰ cm^-2 down to 2×10⁹ cm ^-2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al_0.38Ga _0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5%.