@inproceedings{e0bebd9f0e9c4203ab9a73d9873aabf4,
title = "Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: Nanopore density control",
abstract = "We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH3SiH3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ∼10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH3SiH3 pulse jets.",
author = "Hafizal Yahaya and Yoshifumi Ikoma and Keiji Kuriyama and Teruaki Motooka",
year = "2011",
month = mar,
day = "30",
doi = "10.1117/12.888388",
language = "English",
isbn = "9780819485687",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Seventh International Conference on Thin Film Physics and Applications",
note = "7th International Conference on Thin Film Physics and Applications ; Conference date: 24-09-2010 Through 27-09-2010",
}