Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions

Masaki Goto, Akira Koga, Kazuhiro Yamada, Yoshimine Kato, Kungen Teii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH 4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (∼20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2010
EditorsEdouard V. Monakhov, Tamas Hornos, Bengt G. Svensson
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783037850794
Publication statusPublished - 2011

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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