Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes

Chen Li; Wataru Yokoyama; Shota Izumi; Promros Nathaporn; Tsuyoshi Yoshitake

doi:10.1109/TENCON.2010.5686670

Fabrication of n-type β-FeSi₂/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes

Chen Li
, Wataru Yokoyama
, Shota Izumi
, Promros Nathaporn
, Tsuyoshi Yoshitake

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

n-Type β-FeSi₂ thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi₂/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.

Original language	English
Title of host publication	TENCON 2010 - 2010 IEEE Region 10 Conference
Pages	2225-2227
Number of pages	3
DOIs	https://doi.org/10.1109/TENCON.2010.5686670
Publication status	Published - 2010
Event	2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan Duration: Nov 21 2010 → Nov 24 2010

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other	2010 IEEE Region 10 Conference, TENCON 2010
Country/Territory	Japan
City	Fukuoka
Period	11/21/10 → 11/24/10

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TENCON.2010.5686670

Cite this

Li, C., Yokoyama, W., Izumi, S., Nathaporn, P., & Yoshitake, T. (2010). Fabrication of n-type β-FeSi₂/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2225-2227). Article 5686670 (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686670

Fabrication of n-type β-FeSi₂/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. / Li, Chen; Yokoyama, Wataru; Izumi, Shota et al.
TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2225-2227 5686670 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, C, Yokoyama, W, Izumi, S, Nathaporn, P & Yoshitake, T 2010, Fabrication of n-type β-FeSi₂/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686670, IEEE Region 10 Annual International Conference, Proceedings/TENCON, pp. 2225-2227, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686670

@inproceedings{82995ba777874e7caa2abedfc687e769,

title = "Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes",

abstract = "n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.",

author = "Chen Li and Wataru Yokoyama and Shota Izumi and Promros Nathaporn and Tsuyoshi Yoshitake",

year = "2010",

doi = "10.1109/TENCON.2010.5686670",

language = "English",

isbn = "9781424468904",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

pages = "2225--2227",

booktitle = "TENCON 2010 - 2010 IEEE Region 10 Conference",

note = "2010 IEEE Region 10 Conference, TENCON 2010 ; Conference date: 21-11-2010 Through 24-11-2010",

}

TY - GEN

T1 - Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes

AU - Li, Chen

AU - Yokoyama, Wataru

AU - Izumi, Shota

AU - Nathaporn, Promros

AU - Yoshitake, Tsuyoshi

PY - 2010

Y1 - 2010

N2 - n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.

AB - n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.

UR - https://www.scopus.com/pages/publications/79951645654

UR - https://www.scopus.com/pages/publications/79951645654#tab=citedBy

U2 - 10.1109/TENCON.2010.5686670

DO - 10.1109/TENCON.2010.5686670

M3 - Conference contribution

AN - SCOPUS:79951645654

SN - 9781424468904

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

SP - 2225

EP - 2227

BT - TENCON 2010 - 2010 IEEE Region 10 Conference

T2 - 2010 IEEE Region 10 Conference, TENCON 2010

Y2 - 21 November 2010 through 24 November 2010

ER -