Fabrication Of Mosfets In Si/CaF2/Si Heteroepitaxial Structures

T. Asano; Y. Kuriyama; H. Ishiwara

doi:10.1049/el:19850275

Fabrication Of Mosfets In Si/CaF₂/Si Heteroepitaxial Structures

T. Asano, Y. Kuriyama, H. Ishiwara

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF₂/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm²/V s was obtained.

Original language	English
Pages (from-to)	386-387
Number of pages	2
Journal	Electronics Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1049/el:19850275
Publication status	Published - Jan 1 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19850275

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title = "Fabrication Of Mosfets In Si/CaF2/Si Heteroepitaxial Structures",

abstract = "Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF2/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm2/V s was obtained.",

author = "T. Asano and Y. Kuriyama and H. Ishiwara",

year = "1985",

month = jan,

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doi = "10.1049/el:19850275",

language = "English",

volume = "21",

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journal = "Electronics Letters",

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T1 - Fabrication Of Mosfets In Si/CaF2/Si Heteroepitaxial Structures

AU - Asano, T.

AU - Kuriyama, Y.

AU - Ishiwara, H.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF2/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm2/V s was obtained.

AB - Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF2/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm2/V s was obtained.

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DO - 10.1049/el:19850275

M3 - Article

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EP - 387

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Fabrication Of Mosfets In Si/CaF₂/Si Heteroepitaxial Structures

Abstract

All Science Journal Classification (ASJC) codes

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