Fabrication of Microstructured Magnetic Tunneling Valve Junction

K. Matsuyama, H. Asada, H. Miyoshi, K. Taniguchi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78NI-Fe and Co were deposited by conventional rf sputtering. The rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R = 4.1 Ω, ΔR = 8 mΩ) was observed at room temperature in the microstructured 40 × 40 µm2 junction.

Original languageEnglish
Pages (from-to)3176-3178
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number6
Publication statusPublished - Nov 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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