TY - GEN
T1 - Fabrication of layer structured ZnO nanowire by nanoparticle-assisted pulsed laser deposition for optoelectronic application
AU - Nakamura, D.
AU - Kumeda, A.
AU - Toya, K.
AU - Okazaki, K.
AU - Kubo, K.
AU - Tsuta, K.
AU - Higashihata, M.
AU - Okada, T.
PY - 2011
Y1 - 2011
N2 - ZnO nanowires have attracted a great attention as building blocks for the optoelectronic devices. For the practical optoelectronic applications based on the ZnO nanowires, a synthesis technique for layered structure has significant advantage to fabricate a pn junction, a core/shell structure, and a multiple quantum well structure. We have been succeeded in growing nanowires on the pre-deposited ZnO film and core/shell structure by a newly developed nanoparticle-assisted pulsed-laser deposition (NAPLD) using multi-target changer. In this paper, recent progresses of synthesis of layer-structured ZnO nanowires by the NAPLD are described.
AB - ZnO nanowires have attracted a great attention as building blocks for the optoelectronic devices. For the practical optoelectronic applications based on the ZnO nanowires, a synthesis technique for layered structure has significant advantage to fabricate a pn junction, a core/shell structure, and a multiple quantum well structure. We have been succeeded in growing nanowires on the pre-deposited ZnO film and core/shell structure by a newly developed nanoparticle-assisted pulsed-laser deposition (NAPLD) using multi-target changer. In this paper, recent progresses of synthesis of layer-structured ZnO nanowires by the NAPLD are described.
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U2 - 10.1117/12.874607
DO - 10.1117/12.874607
M3 - Conference contribution
AN - SCOPUS:79952645901
SN - 9780819484598
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Synthesis and Photonics of Nanoscale Materials VIII
T2 - Synthesis and Photonics of Nanoscale Materials VIII
Y2 - 24 January 2011 through 25 January 2011
ER -