Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Hiroshi Nakashima; Youhei Sugimoto; Yuusaku Suehiro; Keisuke Yamamoto; Masanari Kajiwara; Kana Hirayama; Dong Wang

doi:10.1109/ICSICT.2008.4734660

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure

Hiroshi Nakashima, Youhei Sugimoto, Yuusaku Suehiro, Keisuke Yamamoto, Masanari Kajiwara, Kana Hirayama, Dong Wang

Energy Engineering Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

High-permittivity (high-k) dielectrics with HfO₂/Hf _xSi_1-xO_y/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO₂/Si structure. By replacing SiO₂ film of initial structure from plasma oxidized SiO₂ to thermal oxidized SiO₂, the drastic decrease of traps in interfacial layer (IL: Hf_xSi_1-xO_2y) could be successfully achieved, which shows interface state density of 1 × 10¹¹ eV^-1cm^-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO₂ with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	780-783
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734660
Publication status	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: Oct 20 2008 → Oct 23 2008

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	10/20/08 → 10/23/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSICT.2008.4734660

Cite this

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K., & Wang, D. (2008). Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 780-783). Article 4734660 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734660

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. / Nakashima, Hiroshi; Sugimoto, Youhei; Suehiro, Yuusaku et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 780-783 4734660 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakashima, H, Sugimoto, Y, Suehiro, Y, Yamamoto, K, Kajiwara, M, Hirayama, K & Wang, D 2008, Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734660, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 780-783, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 10/20/08. https://doi.org/10.1109/ICSICT.2008.4734660

Nakashima H, Sugimoto Y, Suehiro Y, Yamamoto K, Kajiwara M, Hirayama K et al. Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 780-783. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734660

Nakashima, Hiroshi ; Sugimoto, Youhei ; Suehiro, Yuusaku et al. / Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio₂/Si structure. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 780-783 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

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title = "Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure",

abstract = "High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.",

author = "Hiroshi Nakashima and Youhei Sugimoto and Yuusaku Suehiro and Keisuke Yamamoto and Masanari Kajiwara and Kana Hirayama and Dong Wang",

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AU - Nakashima, Hiroshi

AU - Sugimoto, Youhei

AU - Suehiro, Yuusaku

AU - Yamamoto, Keisuke

AU - Kajiwara, Masanari

AU - Hirayama, Kana

AU - Wang, Dong

PY - 2008

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N2 - High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

AB - High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

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